• DocumentCode
    1911102
  • Title

    Interface Properties of Strained InGaAs/InP Quantum Wells Grown by LP-MOVPE

  • Author

    Schwedler, R. ; Gallmann, B. ; Wolter, K. ; Kohl, A. ; Leo, K. ; Kurz, H. ; Juillaguet, S. ; Camassel, J. ; Laurenti, J.P. ; Baumann, F.H.

  • Author_Institution
    Institute of Semiconductor Electronics, RWTH Aachen, FRG
  • fYear
    1992
  • fDate
    14-17 Sept. 1992
  • Firstpage
    891
  • Lastpage
    894
  • Abstract
    We have analysed ultrathin (5-10 monolayers) In1-xGaxAs/InP (0.17 ¿ x ¿ 1) quantum wells grown by low-pressure metal organic vapour phase epitaxy using optical spectroscopy and transmission electron microscopy. We find, for all compositions, evidence for a complex interface structure at both the lower and the upper interface. Both originate from interdiffusion of arsenic and phosphorus at growth time. The influence of the interface structure on the optical transition energies is discussed in detail.
  • Keywords
    Electron optics; Epitaxial growth; Geographic Information Systems; Indium gallium arsenide; Indium phosphide; Lattices; Multilevel systems; Optical microscopy; Quantum well devices; Spectroscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    0444894780
  • Type

    conf

  • Filename
    5435429
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1911102