DocumentCode
1911111
Title
Control of steep Boron profiles in Si/SiGe heterojunction bipolar transistors
Author
Heinemann, B. ; Knoll, D. ; Fischer, G. ; Krüger, D. ; Lippert, G. ; Osten, H.J. ; Rücker, H. ; Röpke, W. ; Schley, P. ; Tillack, B.
Author_Institution
Institute for Semiconductor Physics, Germany
fYear
1997
fDate
22-24 September 1997
Firstpage
544
Lastpage
547
Keywords
Annealing; Boron; Epitaxial layers; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Molecular beam epitaxial growth; Physics; Pollution measurement; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN
2-86332-221-4
Type
conf
DOI
10.1109/ESSDERC.1997.194486
Filename
1503416
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