Title :
GaAs Schottky Gate bipolar transistors for high voltage power switching applications
Author :
Johnson, C.M. ; Hossin, M. ; O´Neill, A.G.
Author_Institution :
University of Newcastle, UK
fDate :
22-24 September 1997
Keywords :
Anodes; Bipolar transistors; Buffer layers; Current density; Doping; Gallium arsenide; Implants; Insulated gate bipolar transistors; Temperature; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194487
