Title :
Microplasma and Uniform Gate Breakdown in MESFETs
Author :
Vashchenko, V.A. ; Martynov, Y.B. ; Sinkevitch, V.F.
Author_Institution :
State Research Institute "Pulsar", Moscow
fDate :
22-24 September 1997
Keywords :
Conductivity; Current distribution; Electric breakdown; Gallium arsenide; Hysteresis; MESFETs; Numerical simulation; Power generation; Region 8; Tellurium;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194488
