Capacitance-voltage characteristics of the iodine doped MPc/silicon heterojunction

Summary form only given. The current-voltage and capacitance-voltage characteristics of the iodine doped MPc on Si were measured MPc was thermally evaporated on Si substrates and doped via gaseous iodine doping method. For the MPc on n-type silicon, the conventional rectifying, effect was shown in the I-V measurements. In this case the one sided abrupt junction model was well fitted having the density MPc on p-type silicon, the I-V and C-V measurement result in very complicate characteristics due to the trap charges at the heterointerface. The double depletion characteristics were shown and analyzed with the C-V measurements.