DocumentCode
1911255
Title
Mechanisms of Localized Charge Injection: A Technique to Characterize Gate Edge Damage in MOS Transistors
Author
Sridharan, Anand ; Rao, V. Ramgopal ; Brozek, Tomasz ; Werking, James ; Viswanathan, Chand R.
Author_Institution
University of California, USA
fYear
1997
fDate
22-24 September 1997
Firstpage
560
Lastpage
563
Keywords
Charge measurement; Current measurement; Drives; MOS devices; MOSFETs; Plasma applications; Plasma measurements; Thickness measurement; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN
2-86332-221-4
Type
conf
DOI
10.1109/ESSDERC.1997.194490
Filename
1503420
Link To Document