Title :
Mechanisms of Localized Charge Injection: A Technique to Characterize Gate Edge Damage in MOS Transistors
Author :
Sridharan, Anand ; Rao, V. Ramgopal ; Brozek, Tomasz ; Werking, James ; Viswanathan, Chand R.
Author_Institution :
University of California, USA
fDate :
22-24 September 1997
Keywords :
Charge measurement; Current measurement; Drives; MOS devices; MOSFETs; Plasma applications; Plasma measurements; Thickness measurement; Tunneling; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194490
