DocumentCode
1911275
Title
Two-dimensional NOSFET Simulation by means of Multidimensional Spherical Harmonics Expansion of the Boltzmann Transport Equation
Author
Gnudi, A. ; Ventura, D. ; Baccarani, G. ; Odeh, F.
Author_Institution
University of Bologna, Department of Electronics, Viale Risorgimento 2, 40136 Bologna, Italy
fYear
1992
fDate
14-17 Sept. 1992
Firstpage
917
Lastpage
924
Abstract
A spherical harmonics expansion method of the Boltzmann Transport Equation (BTE) is applied to investigate the carrier energy spectrum of a two-dimensional MOSFET up to 3 eV. By this method hot-electron population is obtained all over the device cross-section without the problems of statistical noise and large computational requirements typical of Monte Carlo methods.
Keywords
Boltzmann equation; Distribution functions; Electrons; MOSFET circuits; Mathematical model; Monte Carlo methods; Multidimensional systems; Nominations and elections; Optical scattering; Semiconductor devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location
Leuven, Belgium
Print_ISBN
0444894780
Type
conf
Filename
5435434
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