Title :
Laser emission from semiconductor microcavities: transition from nonperturbative to perturbative regimes
Author :
Hailin Wang ; Xudong Fan ; Hou, H.Q. ; Hammons, B.E.
Author_Institution :
Dept. of Phys., Oregon Univ., Eugene, OR, USA
Abstract :
Summary form only given.We present experimental studies of laser emission in the nonperturbative regime in a GaAs quantum well (QW) microcavity. By tuning the cavity resonance to the low energy side of the inhomogeneous exciton distribution, we are able to achieve laser emission at exciton densities well below the exciton saturation density at which cavity polaritons vanish.
Keywords :
III-V semiconductors; excitons; gallium arsenide; microcavity lasers; polaritons; quantum well lasers; resonant states; spectral line breadth; GaAs; GaAs QW microcavity; GaAs quantum well lasers; cavity polaritons; exciton densities; exciton saturation density; inhomogeneous exciton distribution; laser cavity resonance tuning; laser emission; nonperturbative regimes; perturbative regimes; semiconductor microcavities; Excitons; Laser theory; Laser transitions; Laser tuning; Microcavities; Optical scattering; Physics; Quantum well lasers; Resonance; Semiconductor lasers;
Conference_Titel :
Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-541-2
DOI :
10.1109/IQEC.1998.680080
