DocumentCode :
1911337
Title :
Hot Carrier effects and time-dependent degradation laws in 0.1um bulk Si n-MOSFETs
Author :
Marchand, B. ; Szelag, B. ; Ghibaudo, G. ; Balestra, F.
Author_Institution :
LPCS (UMR CNRS), ENSERG-INPG, France
fYear :
1997
fDate :
22-24 September 1997
Firstpage :
572
Lastpage :
575
Keywords :
Aging; Current measurement; Degradation; Hot carrier effects; Hot carriers; MOSFET circuits; Resistance heating; Stress; Substrates; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194493
Filename :
1503423
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1911337
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