"Microwave memory effect" of activated water and aqueous KOH solution

Author

Walczak, Rafal ; Dziuban, Jan

Author_Institution

Fac. of Microsystem Electron. & Photonics, Wroclaw Univ. of Technol., Poland

Volume

1

fYear

2004

fDate

17-19 May 2004

Firstpage

253

Abstract

A "microwave memory effect" of the microwave activation of water and aqueous fluids has been discovered and studied. It has been found that microwave irradiation caused significant changes of the water structure in comparison to non-irradiated. The outline of the mechanism of the observed effect has been discussed. It has been assumed that microwave irradiation broke the hydrogen bond in a cluster-like water structure. As an effect, free water molecules, as well as hydroxyl ions, are generated. The technical application of the described effect - a new method of fast wet orientation dependent etching of silicon - has been studied. The potential dangerous consequences of the "microwave memory effect" have been discussed as well as technical applications in chemistry and microsystems techniques.

Keywords

etching; hydrogen bonds; oxygen compounds; silicon; water; activated water; aqueous KOH solution; chemistry; cluster-like water structure; free water molecules; hydrogen bond; hydroxyl ions; microsystems techniques; microwave activation; microwave irradiation; microwave memory effect; silicon etching; wet orientation dependent etching; Capacitive sensors; Conductivity; Crystallization; Electromagnetic heating; Electromagnetic wave absorption; Infrared spectra; Microwave ovens; Sensor arrays; Silicon; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves, Radar and Wireless Communications, 2004. MIKON-2004. 15th International Conference on

Print_ISBN

83-906662-7-8

Type

conf

DOI

10.1109/MIKON.2004.1356910

Filename

1356910