Comparative hot carrier induced degradation in 0,25 um MOSFETs with H or D passivated interfaces

Author

Autran, J.L. ; Devine, R.A.B. ; Warren, W.L. ; Vanheusden, K.

Author_Institution

Laboratoire de Physique de la Matière, INSA de Lyon, France

fYear

1997

fDate

22-24 September 1997

Firstpage

580

Lastpage

583

Keywords

Annealing; Degradation; Deuterium; Hot carriers; Hydrogen; Interface states; MOSFETs; Stress; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1997. Proceeding of the 27th European

Print_ISBN

2-86332-221-4

Type

DOI

10.1109/ESSDERC.1997.194495

Filename

1503425

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