Title :
Comparative hot carrier induced degradation in 0,25 um MOSFETs with H or D passivated interfaces
Author :
Autran, J.L. ; Devine, R.A.B. ; Warren, W.L. ; Vanheusden, K.
Author_Institution :
Laboratoire de Physique de la Matière, INSA de Lyon, France
fDate :
22-24 September 1997
Keywords :
Annealing; Degradation; Deuterium; Hot carriers; Hydrogen; Interface states; MOSFETs; Stress; Threshold voltage; Transconductance;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194495
