Manufacturing large diameter GaAs substrates for epitaxial devices by VB method

Author

Nakai, R. ; Hagi, Y. ; Kawarabayashi, S. ; Miyajima, Hiroki ; Toyoda, N. ; Kiyama, M. ; Sawada, S. ; Kuwata, N. ; Nakajima, S.

Author_Institution

Sumitomo Electr. Ind. Ltd., Hyogo, Japan

fYear

1998

fDate

1-4 Nov. 1998

Firstpage

243

Lastpage

246

Abstract

The vertical boat (VB) method has advantages in the growth of substrates for epitaxial devices. Low residual strain and low dislocation four inch GaAs crystals are manufactured with good reproducibility. Low residual strain reduces slip line occurrence and low dislocation density enables growth of low defects in epitaxial layers. FETs fabricated on carbon doped high resistivity VB substrates show high breakdown voltage. Vth was stable at higher drain voltages. Six inch GaAs crystals are also grown by VB and show adequate characteristics.

Keywords

III-V semiconductors; crystal growth from melt; dislocation density; gallium arsenide; integrated circuit manufacture; semiconductor device manufacture; semiconductor epitaxial layers; semiconductor growth; substrates; 4 in; 6 in; C doped high resistivity substrates; FETs; GaAs; GaAs crystals; GaAs:C; IC manufacture; VB method; epitaxial devices; high breakdown voltage; large diameter GaAs substrates; low dislocation; low residual strain; reproducibility; threshold voltage stabilty; vertical boat method; Boats; Capacitive sensors; Conductivity; Crystals; Epitaxial layers; FETs; Gallium arsenide; Manufacturing; Reproducibility of results; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual

Conference_Location

Atlanta, GA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5049-9

Type

conf

DOI

10.1109/GAAS.1998.722686

Filename

722686