• DocumentCode
    1911560
  • Title

    Hot Carrier Reliability Characteristics of Ultra Short Channel CMOSFET´s

  • Author

    Hwang, Hyunsang

  • Author_Institution
    ULSI Laboratory, LG Semicon Co., #1, Hyangjeong, Hungduk, Cheongju 360-480, KOREA
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    233
  • Lastpage
    236
  • Abstract
    Extensive reliability characteristics of ultra-short channel CMOS devices with various process conditions were investigated. We found that device scaling down to 0.1¿m is possible by optimizing doping profile and oxide thickness. We suggest that hot-carrier induced circuit lifetime (¿f/f=10%) is not a major constraint for Leff=0.1¿m at 1.5V operating bias.
  • Keywords
    CMOSFETs; Degradation; Electrons; Hot carriers; Impact ionization; Implants; Laboratories; MOSFET circuits; Ultra large scale integration; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5435447
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1911560