DocumentCode :
1911569
Title :
Monolithic micromachined planar spiral transformer
Author :
Ribas, R.P. ; Lescot, J. ; Leclercq, J.L. ; Karam, J.M. ; Ndagijimana, F.
Author_Institution :
TIMA Lab., Grenoble, France
fYear :
1998
fDate :
1-4 Nov. 1998
Firstpage :
255
Lastpage :
258
Abstract :
Micromachined microwave passive devices have been successfully fabricated in a standard GaAs HEMT MMIC technology, through a straightforward, low-cost, maskless front-side bulk micromachining. Planar spiral inductors with the strips suspended individually have been possible because of the small ´open area´ dimensions, needed to etch away some portions of the bulk material, and present numerous advantages with respect to the commonly used membrane-supported device, such as the reduced etching time and the elimination of fringing parasitic capacitances. In this paper, a two interleaved spiral inductor structure, in a 1:1 transformer-like configuration, has been fabricated and characterized up to 15 GHz, in order to demonstrate the features of this novel inductor. Moreover, heating and mechanical characteristics associated with the suspended devices are also briefly investigated.
Keywords :
HEMT integrated circuits; equivalent circuits; etching; field effect MMIC; gallium arsenide; high-frequency transformers; inductors; integrated circuit technology; micromachining; 15 GHz; GaAs; GaAs HEMT MMIC technology; etching time reduction; fringing parasitic capacitances elimination; heating characteristics; maskless front-side bulk micromachining; mechanical characteristics; micromachined planar spiral transformer; microwave passive devices; monolithic spiral transformer; suspended devices; two interleaved inductor structure; Electromagnetic heating; Etching; Gallium arsenide; HEMTs; Inductors; MMICs; Micromachining; Microwave devices; Microwave technology; Spirals;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual
Conference_Location :
Atlanta, GA, USA
ISSN :
1064-7775
Print_ISBN :
0-7803-5049-9
Type :
conf
DOI :
10.1109/GAAS.1998.722692
Filename :
722692
Link To Document :
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