Title :
A new structure for reduction of the leakage currrent in the low temperature Poly-Si TFTs fabricated by the MILC process
Author :
Ihn, Tae-Hyung ; Lee, Byung-Il ; Joo, Seung-Ki
Author_Institution :
Seoul National University, Korea
fDate :
22-24 September 1997
Keywords :
Active matrix liquid crystal displays; Annealing; Crystallization; Dielectric thin films; Leakage current; Plasma applications; Plasma chemistry; Plasma temperature; Sputtering; Thin film transistors;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194503
