Title :
Physics and Technology for MOSFETs at 0.1 micron and Below
Author :
Antoniadis, Dimitri A.
Author_Institution :
Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
No technical surprises are expected in device development of CMOS with Leff in the 0.1 μm to 0.05 μm regime. Non-stationary effects such as velocity overshoot near the source end of the channel in nMOSFETs, and carrier energy reduction for a given e-field manfest themselves at these channel lengths. However, channel mobility reduction near the source end due to high vertical e-fields, particularly as VT is kept nearly constant with reduced Leff, tends to diminish those effects. It is not clear at the present time whether they will have significant technological significance.
Keywords :
CMOS analogue integrated circuits; MOSFET; CMOS development; carrier energy reduction; channel lengths; channel mobility reduction; nMOSFET; size 0.1 mum to 0.05 mum; velocity overshoot; vertical e-fields; CMOS technology; Doping profiles; Electrodynamics; Electrostatics; Lithography; MOSFETs; Physics; Predictive models; Production; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
