Title :
EBE growth and properties of CuInS/sub 2/ thin film
Author :
Park, Gyu ; Jeong, J.W.
Author_Institution :
Chonnam National University
Abstract :
Summary form only given. A polycrystalline thin film of Copper indium disulfide, (CuInS/sub 2/) has a great importance as a potential material for the new terrestrial photovoltaic generation. CuInS/sub 2/ p-n homojuction has been predicted to yield photovoltaic efficiencies of 27/spl tilde/32[%], because of direct gap of 1.55 [eV]. In this study, we investigate the physical and electrical characteristics of CuInS/sub 2/thin films deposited by EBE method. And the optimum conditions for single phase CuInS/sub 2/ (p-type, n-type) formation and the influence of deviations from the ideal composition are discussed.
Keywords :
Copper; Electric variables; Indium; Photovoltaic systems; Solar power generation; Transistors;
Conference_Titel :
Science and Technology of Synthetic Metals, 1994. ICSM '94. International Conference on
Conference_Location :
Seoul, Korea
DOI :
10.1109/STSM.1994.836095
