Title :
Experimental study of reverse-bias failure mechanisms in bipolar mode JFET (BMFET)
Author :
Busatto, Giovanni ; Blackburn, David L. ; Berning, David W.
Author_Institution :
Dept. of Electron. Eng., Univ. of Napoli, Italy
Abstract :
A systematic, nondestructive, experimental study of the BMFET (bipolar mode JFET) behavior during its failure is presented. The variation of the reverse-bias safe operating areas (RBSOAs) for an inductive load with different bias conditions is described. It is shown that the device breakdown is strongly dependent on the reverse current gain. On the basis of the experimental results, insight into the physics of the failure mechanisms is given, and it is shown that most of the RBSOA limitations appear to result from device layout problems
Keywords :
failure analysis; junction gate field effect transistors; nondestructive testing; semiconductor device testing; BMFET; bipolar mode JFET; inductive load; nondestructive test; reverse current gain; reverse-bias failure mechanisms; reverse-bias safe operating areas; Councils; Electric breakdown; Failure analysis; Fingers; Lapping; NIST; Performance evaluation; Physics; Reproducibility of results; Testing;
Conference_Titel :
Power Electronics Specialists Conference, 1993. PESC '93 Record., 24th Annual IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-1243-0
DOI :
10.1109/PESC.1993.471973
