Can cellular automata methods compete with Monte Carlo semiconductor device simulations?

Author

Zandler, G. ; Rein, A. ; Saraniti, M. ; Vogl, P. ; Lugli, P.

Author_Institution

Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany

fYear

1993

fDate

13-16 Sept. 1993

Firstpage

21

Lastpage

28

Abstract

A cellular-automaton (CA) approach for solving the Boltzmann equation is presented and applied to semiconductor device simulation. The comparison with Drift Diffusion and Monte Carlo (MC) algorithms shows the capabilities of the CA as a modelling tool, even in the presence of complicated geometries and hot carrier effects. With respect to the MC method, the CA exhibits a speed up of two orders of magnitude on scalar processors, coupled to a much more straightforward implementation on parallel processors.

Keywords

Boltzmann equation; Monte Carlo methods; cellular automata; geometry; hot carriers; parallel processing; semiconductor device models; Boltzmann equation; CA approach; MC algorithm; Monte Carlo algorithm; cellular automata method; drift diffusion algorithm; geometry; hot carrier effect; parallel processor; scalar processor; semiconductor device simulation; Computational modeling; Gallium arsenide; Geometry; Hot carrier effects; Lattices; MESFETs; MOSFET circuits; Monte Carlo methods; Nonlinear dynamical systems; Semiconductor devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European

Conference_Location

Grenoble

Print_ISBN

2863321358

Type

conf

Filename

5435455