Title :
RBSOA characterization of GTO devices
Author :
Chen, D.Y. ; Carpenter, G. ; Lee, F.C.
Author_Institution :
Virginia Power Electron. Center, Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
GTO devices are characterized using a nondestructive RBSOA (reverse-bias safe operating area) tester. Breakdown phenomena observed in GTO testing are very much different from those of a BJTs. Explanation of the cause of the loss of device voltage blocking capability during turn-off is given
Keywords :
nondestructive testing; semiconductor device testing; thyristor applications; thyristors; GTO devices; breakdown phenomena; device voltage blocking capability; nondestructive testing; reverse bias safe operating area; turn-off; Breakdown voltage; Circuit testing; Electric breakdown; Electronic equipment testing; Inductors; Nondestructive testing; Power electronics; Shunt (electrical); Switches; Switching circuits;
Conference_Titel :
Power Electronics Specialists Conference, 1993. PESC '93 Record., 24th Annual IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-1243-0
DOI :
10.1109/PESC.1993.471974
