DocumentCode
1911739
Title
An analytical model of current-splitting in CMOS-compatible lateral bipolar transistors
Author
Freund, D. ; Kloes, A. ; Kostka, A.
Author_Institution
Solid State Electron. Lab., TH Darmstadt, Darmstadt, Germany
fYear
1993
fDate
13-16 Sept. 1993
Firstpage
29
Lastpage
32
Abstract
The use of CMOS-compatible lateral bipolar transistors in various applications makes it necessary to be able to estimate the splitting of the collector currents by means of an analytical model. In this paper, we present such an analytical 2D-model that was derived using conformal mapping techniques. It allows for the geometry-dependent calculation of vertical and lateral currents including their dependance on collector voltage. The model can be extended to realistic 3D-structures.
Keywords
MOSFET; bipolar transistors; conformal mapping; geometry; CMOS-compatible lateral bipolar transistor; analytical 2D-model; collector voltage; conformal mapping technique; currents collector splitting estimation; geometry-dependent calculation; lateral current; vertical current; Analytical models; Bipolar transistors; Circuit synthesis; Geometry; Laboratories; Numerical simulation; Solid modeling; Solid state circuits; State estimation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location
Grenoble
Print_ISBN
2863321358
Type
conf
Filename
5435456
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