Volume and integrated p-i-n modulators in millimeter frequency range

Author

Tecpoyotl-Torres, M. ; Koshevaya, S. ; Moroz, I. ; Grimalsky, V. ; Escobedo-Alatorre, J. ; Sanchez-Mondragon, J.

Author_Institution

Autonomous State Univ. of Morelos, Cuernavaca Mor, Mexico

Volume

1

fYear

2004

fDate

17-19 May 2004

Firstpage

329

Abstract

The millimeter frequency range is being intensively investigated. Novel types of oscillators, both diode-like (TUNETT) and lasers have been put forward; the search of effective control devices is also of great interest. Volume and surface oriented integrated p-i-n-structures modulators have demonstrated high efficiency in millimeter wave range. These structures possess high modulation and high-speed properties, sustain great EM powers, but their modulation characteristics in millimeter and sub millimeter range have not been yet investigated in detail. A comparison and criteria of these modulators based on silicon, in millimeter range are presented here.

Keywords

millimetre wave oscillators; modulators; p-i-n diodes; integrated p-i-n modulators; millimeter frequency range; oscillators; volume p-i-n modulators; Equations; Frequency modulation; Microwave devices; Millimeter wave devices; P-i-n diodes; PIN photodiodes; Surface waves; Switches; Varactors; Waveguide junctions;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves, Radar and Wireless Communications, 2004. MIKON-2004. 15th International Conference on

Print_ISBN

83-906662-7-8

Type

conf

DOI

10.1109/MIKON.2004.1356935

Filename

1356935