• DocumentCode
    1911866
  • Title

    Biexcitonic effects in semiconductor microcavities

  • Author

    Xudong Fan ; Hailin Wang ; Hou, H.Q. ; Hammons, B.E.

  • Author_Institution
    Dept. of Phys., Oregon Univ., Eugene, OR, USA
  • fYear
    1998
  • fDate
    8-8 May 1998
  • Firstpage
    31
  • Abstract
    Summary form only given.In this paper we present experimental and theoretical investigations of effects of biexcitons on coupled exciton-photon excitations, or cavity polaritons, in a GaAs quantum well (QW) microcavity. Using polarization-dependent transient pump-probe spectroscopy, we show that biexcitonic effects can result in a significant increase in normal mode splitting (NMS) of cavity polaritons, in sharp contrast to effects of band filling and exciton ionization that reduce the NMS. A theoretical model based on modified optical Bloch equations is developed to describe qualitatively effects of biexcitons in semiconductor microcavities.
  • Keywords
    III-V semiconductors; biexcitons; gallium arsenide; optical resonators; polaritons; semiconductor quantum wells; GaAs; GaAs quantum well; band filling; biexciton; cavity polariton; exciton ionization; exciton-photon excitation; normal mode splitting; optical Bloch equation; semiconductor microcavity; transient pump-probe spectroscopy; Equations; Excitons; Filling; Gallium arsenide; Ionization; Microcavities; Optical polarization; Optical pumping; Quantum mechanics; Spectroscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    1-55752-541-2
  • Type

    conf

  • DOI
    10.1109/IQEC.1998.680082
  • Filename
    680082