Title :
Biexcitonic effects in semiconductor microcavities
Author :
Xudong Fan ; Hailin Wang ; Hou, H.Q. ; Hammons, B.E.
Author_Institution :
Dept. of Phys., Oregon Univ., Eugene, OR, USA
Abstract :
Summary form only given.In this paper we present experimental and theoretical investigations of effects of biexcitons on coupled exciton-photon excitations, or cavity polaritons, in a GaAs quantum well (QW) microcavity. Using polarization-dependent transient pump-probe spectroscopy, we show that biexcitonic effects can result in a significant increase in normal mode splitting (NMS) of cavity polaritons, in sharp contrast to effects of band filling and exciton ionization that reduce the NMS. A theoretical model based on modified optical Bloch equations is developed to describe qualitatively effects of biexcitons in semiconductor microcavities.
Keywords :
III-V semiconductors; biexcitons; gallium arsenide; optical resonators; polaritons; semiconductor quantum wells; GaAs; GaAs quantum well; band filling; biexciton; cavity polariton; exciton ionization; exciton-photon excitation; normal mode splitting; optical Bloch equation; semiconductor microcavity; transient pump-probe spectroscopy; Equations; Excitons; Filling; Gallium arsenide; Ionization; Microcavities; Optical polarization; Optical pumping; Quantum mechanics; Spectroscopy;
Conference_Titel :
Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-541-2
DOI :
10.1109/IQEC.1998.680082