Title :
Noise Performance of MESFETs and MODFETs: Influence of the Gate Leakage Current
Author :
Danneville, Frangois ; Dambrine, G. ; Happy, H. ; Cappy, A.
Author_Institution :
Inst. d´´Electron. et de Microelectron. du Nord, Univ. des Sci. et Technol. de LILLE, Villeneuve-d´´Ascq, France
Abstract :
In this paper, the influence of the gate leakage current on the noise performance of MESFETs and MODFETs is investigated. The theoretical results are discussed and it is shown that the noise performance of FETs is strongly dependent on the gate leakage current value, especially at a few GHz.
Keywords :
Schottky gate field effect transistors; high electron mobility transistors; leakage currents; semiconductor device noise; MESFET; MODFET; gate leakage current; noise performance; Acoustical engineering; Circuit noise; FETs; Frequency; HEMTs; Leakage current; Low-frequency noise; MESFETs; MODFETs; Noise figure;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
