Title :
Diluted wet oxidation: a novel technique for ultra thin gate oxide formation
Author :
Tanabe, Yoshikazu ; Nakatsuka, Yasuhiko ; Sakai, Satoshi ; Miyazaki, Tom ; Nagahama, Toshiaki
Author_Institution :
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
Abstract :
An ultra-pure water vapor generator that is compatible with RTP wet oxidation has been developed to meet the need for high quality gate oxides in deep sub-micron device process. This generator is based on a catalytic surface reaction of hydrogen gas and oxygen gas, and enables a precise control of H2O/O2 ratio in the processing gas at any desired percentage. Diluted Wet Oxidation (DWO) utilizes a low H2O/O2 ratio precisely controlled by the water vapor generator to obtain a low oxidation rate comparable to dry oxidation, which results in an accurate film thickness while maintaining the film characteristics of wet oxidation
Keywords :
catalysis; chemical variables control; flow control; oxidation; rapid thermal processing; thickness control; H2O; H2O/O2 ratio; O2; RTP wet oxidation; accurate film thickness; catalytic surface reaction; deep submicron device process; diluted wet oxidation; flow control; high quality gate oxides; low oxidation rate; oxide thickness control; precise control; processing gas; torch-type generator; ultrapure water vapor generator; ultrathin gate oxide formation; Character generation; Controllability; Furnaces; Hydrogen; Oxidation; Rapid thermal processing; Stationary state; Temperature; Thickness control; Water;
Conference_Titel :
Semiconductor Manufacturing Conference Proceedings, 1997 IEEE International Symposium on
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3752-2
DOI :
10.1109/ISSM.1997.664621
