Title :
Large Area Deposition of Device Quality SiO2 for Poly Si TFT Fabrication
Author :
Plais, F. ; Morin, B. ; Stroh, R.J. ; Kretz, T. ; Legagneux, P. ; Huet, O. ; Walaine, C. ; Pribat, D. ; Jiang, N. ; Hugon, M.C. ; Agius, B.
Author_Institution :
Thomson CSF LCR, Domaine de Corbeville, Orsay, France
Abstract :
The deposition of device quality SiO2 thin films has been achieved in a large surface DECR deposition system. The values obtained for p (1-2 1016 Ωcm) and Ec (3-4 MV cm-1) are of the same order as the values previously reported showing that the extension of the DECR concept to up to 8" and more is possible. This method seems to be a promising one for the obtention of the gate oxide of polysilicon TFTs as it is simplier than the previously reported double step procedure and as it does not require substrate heating, which, in the case of glass substrates, would increase the processing time.
Keywords :
cyclotron resonance; elemental semiconductors; plasma CVD; silicon; silicon compounds; thin film transistors; Si-SiO2; gate oxide; glass substrate; large surface DECR deposition system; polyTFT fabrication; substrate heating; thin film device quality deposition; Active matrix liquid crystal displays; Computer displays; Dielectric materials; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma measurements; Plasma properties; Plasma temperature; Thin film transistors;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
