Title :
Mechanisms of Hot-Carrier Degradation of Analog Device Parameters in n-MOSFETs
Author :
Thewes, Roland ; Weber, Werner ; Goser, Karl
Abstract :
Hot-carrier (HC) degradation of analog operation parameters has been investigated by stressing LDD-n-MOSFETs with channel lengths of 1.0-5.0 μm. A model has been developed to clarify the different mechanisms leading to degradation of the differential drain output resistance. Experimental evidence is given to check the model. Finally, possible consequences in the circuit environment are discussed.
Keywords :
MOSFET; hot carriers; HC degradation; LDD-n-MOSFET; analog device operation parameter; differential drain output resistance; hot-carrier degradation; size 1.0 mum to 5.0 mum; Charge carrier processes; Circuit stability; Degradation; Electron traps; Hot carrier effects; Hot carriers; Interface states; Low voltage; MOSFET circuits; Stress;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
