DocumentCode
1912019
Title
Mechanisms of Hot-Carrier Degradation of Analog Device Parameters in n-MOSFETs
Author
Thewes, Roland ; Weber, Werner ; Goser, Karl
fYear
1993
fDate
13-16 Sept. 1993
Firstpage
85
Lastpage
88
Abstract
Hot-carrier (HC) degradation of analog operation parameters has been investigated by stressing LDD-n-MOSFETs with channel lengths of 1.0-5.0 μm. A model has been developed to clarify the different mechanisms leading to degradation of the differential drain output resistance. Experimental evidence is given to check the model. Finally, possible consequences in the circuit environment are discussed.
Keywords
MOSFET; hot carriers; HC degradation; LDD-n-MOSFET; analog device operation parameter; differential drain output resistance; hot-carrier degradation; size 1.0 mum to 5.0 mum; Charge carrier processes; Circuit stability; Degradation; Electron traps; Hot carrier effects; Hot carriers; Interface states; Low voltage; MOSFET circuits; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location
Grenoble
Print_ISBN
2863321358
Type
conf
Filename
5435467
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