Title :
Efficient Calculation of 3-D Stress Distributions in Silicon around Embedded Structures
Author :
Slehobr, R. ; Hobler, G. ; Pötzl, H.
Author_Institution :
Inst. fur Allgememe Elektrotechnik und Elektron., Univ. of Technol. Vienna, Vienna, Austria
Abstract :
An efficient way to calculate 3-D stress distributions in silicon around embedded structures caused by different thermal expansion coefficients between silicon and inclusion is presented. The computational method is based on the solution for a parallelepiped, which is extended to arbitrarily shaped embedded structures.
Keywords :
elemental semiconductors; embedded systems; internal stresses; silicon; thermal expansion; 3D stress distribution calculation; Si; arbitrarily shaped embedded structure; computational method; embedded structure; parallelepiped solution; thermal expansion coefficient; Circuits; Computational modeling; Concurrent computing; Elasticity; Embedded computing; Equations; Production; Silicon; Thermal expansion; Thermal stresses;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
