Intrinsically switchable bulk acoustic wave resonators based on paraelectric films

Author

Vorobiev, A. ; Gevorgian, S.

Author_Institution

Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Gothenburg, Sweden

fYear

2014

fDate

6-9 Oct. 2014

Firstpage

347

Lastpage

350

Abstract

The concept of the frequency switching in the composite bulk acoustic wave (BAW) resonators based on the thin films of the paraelectric-phase ferroelectrics is demonstrated experimentally for the first time. The composite BAW resonators based on the Ba_0.25Sr_0.75TiO₃/SrRuO₃/Ba_0.25Sr_0.75TiO₃ multilayer structure are fabricated and characterized. It is shown that the resonance frequency of the BAW resonators can be switched more than two times (from 3.6 GHz to 7.7 GHz) by changing polarity of the 5 V dc bias voltage at the one of the ferroelectric layers. The composite BAW resonators performance is analyzed using the theory of the dc field induced piezoelectric effect in the paraelectric-phase ferroelectrics.

Keywords

acoustic resonators; bulk acoustic wave devices; ferroelectric materials; ferroelectric thin films; Ba_0.25Sr_0.75TiO₃-SrRuO₃-Ba_0.25Sr_0.75TiO₃; composite BAW resonators; composite bulk acoustic wave resonators; dc field induced piezoelectric effect; ferroelectric layers; frequency 3.6 GHz to 7.7 GHz; frequency switching; intrinsically switchable bulk acoustic wave resonators; multilayer structure; paraelectric films; paraelectric-phase ferroelectrics; resonance frequency; thin films; voltage 5 V; Acoustic waves; Electrodes; Films; Piezoelectric polarization; Resonant frequency; Switches; Time-frequency analysis; ferroelectric films; film bulk acoustic resonators; frequency control; tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2014 44th European

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMC.2014.6986441

Filename

6986441