Title :
Analysis and Modeling of Low Frequency Noise in Extremely Deep Submicron Silicon CMOS Devices
Author :
Roux-dit-Buisson, O. ; Ghibaudo, G. ; Brini, J. ; Guégan, G.
Author_Institution :
LPCS, ENSERG, Grenoble, France
Abstract :
An analysis and modelling of the low frequency noise characteristics of deeply submicronic CMOS devices is conducted. It is shown that the scaling down of the gate area leads to dramatic change of the noise nature and to a substantial increase of the noise level dispersion. A generic modelling of the noise amplitude and spectrum is worked out as a function of geometry and biases, allowing a good representation of the noise characteristics to be obtained.
Keywords :
MIS devices; elemental semiconductors; geometry; semiconductor device models; semiconductor device noise; silicon; Si; extremely deep submicron CMOS device; generic modelling; geometry; low frequency noise analysis; low frequency noise modeling; noise amplitude; noise level dispersion; noise spectrum; scaling down gate area; Fluctuations; Frequency; Integrated circuit noise; Low-frequency noise; MOS devices; Noise level; Noise measurement; Semiconductor device modeling; Signal to noise ratio; Silicon;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
