Title :
Low-Frequency Noise Sources in Polysilicon Emiter Bipolar Transistors: Influence of Hot-Electron-Induced Degradation and Post-Stress Recovery
Author :
Mounib, A. ; Balestra, F. ; Mathieu, N. ; Brini, J. ; Ghibaudo, G. ; Chovet, A. ; Chantre, A. ; Nouailhat, A.
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG/INPG, Grenoble, Algeria
Abstract :
The noise properties of polysilicon emitter bipolar transistors are studied. The influences of the various chemical treatments and annealing temperatures, prior and after polysilicon deposition, on the noise magnitude are shown. The impact of hot-electron-induced degradation and post-stress recovery on the base and collector current fluctuations are also investigated in order to determine the main noise sources of these devices.
Keywords :
annealing; bipolar transistors; elemental semiconductors; hot carriers; hot electron transistors; semiconductor device noise; silicon; Si; annealing temperature; chemical treatment; collector current fluctuation; hot-electron-induced degradation; low-frequency noise source; noise magnitude; polysilicon deposition; polysilicon emitter bipolar transistor; post-stress recovery; Aging; Annealing; Bipolar transistors; Degradation; Etching; Fluctuations; Geometry; Low-frequency noise; Semiconductor device noise; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
