Extraction of carrier transport properties in graphene from microwave measurements

Author

Andersson, M.A. ; Vorobiev, A. ; Gevorgian, S. ; Stake, J.

Author_Institution

Dept. of Microtechnol. & Nanosci. - MC2, Chalmers Univ. of Technol., Goteborg, Sweden

fYear

2014

fDate

6-9 Oct. 2014

Firstpage

359

Lastpage

362

Abstract

Carrier transport parameters of graphene grown by chemical vapor deposition (CVD) and graphene-metal contacts are extracted from microwave measurements in the frequency range 0.1-20 GHz using Corbino disks. It is shown that the charged impurities are effectively screened by the high permittivity of the SrTiO₃ substrate. In the case of fused silica substrate the charged impurities are not completely screened and the mobility is limited either by the charged impurities or/and resonant scatterers depending on their relative concentration.

Keywords

chemical vapour deposition; graphene; impurities; microwave measurement; permittivity; CVD; Corbino disks; SrTiO₃; carrier transport property extraction; charged impurities; chemical vapor deposition; frequency 0.1 GHz to 20 GHz; fused silica substrate; graphene-metal contacts; high permittivity; microwave measurements; resonant scatterers; Capacitance; Films; Graphene; Metals; Resistance; Scattering; Substrates; Drude model; Graphene; Pd contacts; carrier scattering; impurity screening; microwave characterisation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2014 44th European

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMC.2014.6986444

Filename

6986444