Title :
Eliminating polymer flake defects using an oxygen free chemistry
Author :
Chang, Hong ; Wilson, Cheri ; Jackson, James
Author_Institution :
Intel Corp., Hillsboro, OR, USA
Abstract :
Catastrophic defect excursions existed in a plasma etch process due to polymer flaking. Several possible fixes such as an in-situ particle check and a Cl2 plasma clean were investigated without effectively eliminating this yield limiting defect. This paper will describe how an oxygen free chemistry was adopted to eliminate the polymer flake defect. This process change eliminated polymer flake excursions, improved factory line yield by more than 1% and increased etcher availability by 15%
Keywords :
integrated circuit yield; sputter etching; surface cleaning; catastrophic defect excursions; flake defects elimination; improved factory line yield; increased etcher availability; oxygen free chemistry; plasma etch process; polymer flaking; recess etch; yield limiting defect; Cathodes; Electrodes; Etching; Oxygen; Plasma applications; Plasma chemistry; Plasma temperature; Polymers; Surface cleaning; Surface cracks;
Conference_Titel :
Semiconductor Manufacturing Conference Proceedings, 1997 IEEE International Symposium on
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3752-2
DOI :
10.1109/ISSM.1997.664632
