Title :
Optimized in situ rinsing for HF last processes
Author :
Wolke, K. ; Kubelbeck, A. ; Cornelissen, I. ; Meuris, M. ; Oshinowo, J.
Author_Institution :
STEAG MicroTech GmbH, Pleizhausen, Germany
Abstract :
In order to optimize HF last processing in situ rinsing is frequently discussed to avoid the transition through the air liquid interface. In this work a special tank design for high efficient rinsing post HF wafer treatment was designed, characterized by laser interferometric flow measurements and verified by studies on the etch characteristics of thermal oxide wafers in diluted hydrofluoric acid. An in situ rinse process featuring only 45 seconds of process time and less than 15 gal/batch Di water consumption at uniformities comparable to sequential processing is presented and discussed
Keywords :
drying; etching; flow simulation; laser velocimetry; surface cleaning; 45 sec; HF last processing; Marangoni effect; air liquid interface transition; deionised water consumption; diluted hydrofluoric acid; direct dry; etch characteristics; etch uniformities; flow simulation; high efficient rinsing; laser interferometric flow measurements; optimized in situ rinsing; post HF wafer treatment; rinse efficiency; sequential processing; special tank design; thermal oxide wafers; Chemical processes; Cleaning; Etching; Fluid flow measurement; Hafnium; Laser transitions; Optical design; Silicon carbide; Surface treatment; Volume measurement;
Conference_Titel :
Semiconductor Manufacturing Conference Proceedings, 1997 IEEE International Symposium on
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3752-2
DOI :
10.1109/ISSM.1997.664633
