Optimized in situ rinsing for HF last processes

Author

Wolke, K. ; Kubelbeck, A. ; Cornelissen, I. ; Meuris, M. ; Oshinowo, J.

Author_Institution

STEAG MicroTech GmbH, Pleizhausen, Germany

fYear

1997

fDate

6-8 Oct 1997

Abstract

In order to optimize HF last processing in situ rinsing is frequently discussed to avoid the transition through the air liquid interface. In this work a special tank design for high efficient rinsing post HF wafer treatment was designed, characterized by laser interferometric flow measurements and verified by studies on the etch characteristics of thermal oxide wafers in diluted hydrofluoric acid. An in situ rinse process featuring only 45 seconds of process time and less than 15 gal/batch Di water consumption at uniformities comparable to sequential processing is presented and discussed

Keywords

drying; etching; flow simulation; laser velocimetry; surface cleaning; 45 sec; HF last processing; Marangoni effect; air liquid interface transition; deionised water consumption; diluted hydrofluoric acid; direct dry; etch characteristics; etch uniformities; flow simulation; high efficient rinsing; laser interferometric flow measurements; optimized in situ rinsing; post HF wafer treatment; rinse efficiency; sequential processing; special tank design; thermal oxide wafers; Chemical processes; Cleaning; Etching; Fluid flow measurement; Hafnium; Laser transitions; Optical design; Silicon carbide; Surface treatment; Volume measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Conference Proceedings, 1997 IEEE International Symposium on

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-3752-2

Type

conf

DOI

10.1109/ISSM.1997.664633

Filename

664633