DocumentCode :
191225
Title :
High gain graphene field effect transistors for wideband amplifiers
Author :
Habibpour, Omid ; Winters, Michael ; Rorsman, Niklas ; Zirath, Herbert
Author_Institution :
Microtechnol. & Nanosci. Dept., Chalmers Univ. of Technol., Gothenburg, Sweden
fYear :
2014
fDate :
6-9 Oct. 2014
Firstpage :
371
Lastpage :
373
Abstract :
We demonstrate graphene field of transistors (G-FETs) providing power gain of > 7 dB in a 50 O system. The G-FETs have |S21| > 0 dB up to 7 GHz. The result indicates the feasibility for G-FET based wideband amplifiers.
Keywords :
field effect transistors; graphene devices; microwave amplifiers; wideband amplifiers; G-FET based wideband amplifiers; graphene field effect transistors; Broadband amplifiers; Field effect transistors; Gain; Graphene; Logic gates; Resists; Transconductance; Graphene FET; hydrogen intercalated graphene; power gain; wideband amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference (EuMC), 2014 44th European
Conference_Location :
Rome
Type :
conf
DOI :
10.1109/EuMC.2014.6986447
Filename :
6986447
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=191225
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