Title :
A method to adapt Zth-junction-to-ambient curves to varying ambient conditions
Author :
Schweitzer, Dirk
Author_Institution :
Infineon Technol. AG, Neubiberg, Germany
Abstract :
The transient temperature response to a unit power step, commonly referred to as Zth-curve, is an important thermal characteristic for semiconductor devices. Zth-junction-to-ambient curves can be found in most component data sheets and are often used to calculate the time-dependent junction temperature response to a given power pulse or profile. The influence of ambient temperature and power dissipation on Zth-JA however is often neglected in these calculations since it is not possible to provide a Zth-JA curve for each ambient temperature and power dissipation. This paper presents an algorithm based on clipping a part of the structure function which allows transforming a given Zth-JA curve such that it can be adapted to arbitrary ambient temperature and power dissipation levels.
Keywords :
semiconductor devices; thermal analysis; transient response; Zth-JA curve; Zth-junction-to-ambient curves; power dissipation; power pulse; semiconductor devices; structure function; thermal characteristic; time-dependent junction temperature response; transient temperature response; unit power step; varying ambient conditions; Heat transfer; MOSFET circuits; Mathematical model; Temperature; Temperature dependence; Thermal resistance; Rth-JA; Transient thermal resistance; Zth-JA; radiation and convection heat transfer; structure function analysis;
Conference_Titel :
Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM), 2012 28th Annual IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1110-6
Electronic_ISBN :
1065-2221
DOI :
10.1109/STHERM.2012.6188850