Title :
A new CVD film formation process using ionization of TEOS
Author :
Adachi, Motoaki ; Hayasi, T. ; Fujimoto, Toshiyuki ; Okuyama, Kikuo
Author_Institution :
Osaka Prefectural Univ., Sakai, Japan
Abstract :
A new CVD method called ionization CVD, where ionized source molecules were deposited on a substrate by Coulombic force, was developed to control film formation and particle generation. This method was applied to the TEOS/O3-APCVD process by using the surface corona discharge. The growth rate of film formed by the ionization CVD was 2-4 times higher than that by the common CVD. Films deposited by the new CVD showed strongly the flow-like shape. Nanometer-sized particles which have been generally generated in the common reactor, were not detected in the ionization CVD reactor
Keywords :
CVD coatings; chemical vapour deposition; insulating thin films; silicon compounds; CVD film formation process; Coulombic force; FTIR spectra; SEM micrographs; SiO2; TEOS/O3-APCVD process; fast deposition; film growth rate; flow-like shape; ionization CVD; ionization of TEOS; particle generation; surface corona discharge; Assembly; Electrodes; Force control; Inductors; Ionization; Optical films; Particle measurements; Substrates; Surface discharges; Voltage;
Conference_Titel :
Semiconductor Manufacturing Conference Proceedings, 1997 IEEE International Symposium on
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3752-2
DOI :
10.1109/ISSM.1997.664635
