A new CVD film formation process using ionization of TEOS

Author

Adachi, Motoaki ; Hayasi, T. ; Fujimoto, Toshiyuki ; Okuyama, Kikuo

Author_Institution

Osaka Prefectural Univ., Sakai, Japan

fYear

1997

fDate

6-8 Oct 1997

Abstract

A new CVD method called ionization CVD, where ionized source molecules were deposited on a substrate by Coulombic force, was developed to control film formation and particle generation. This method was applied to the TEOS/O₃-APCVD process by using the surface corona discharge. The growth rate of film formed by the ionization CVD was 2-4 times higher than that by the common CVD. Films deposited by the new CVD showed strongly the flow-like shape. Nanometer-sized particles which have been generally generated in the common reactor, were not detected in the ionization CVD reactor

Keywords

CVD coatings; chemical vapour deposition; insulating thin films; silicon compounds; CVD film formation process; Coulombic force; FTIR spectra; SEM micrographs; SiO₂; TEOS/O₃-APCVD process; fast deposition; film growth rate; flow-like shape; ionization CVD; ionization of TEOS; particle generation; surface corona discharge; Assembly; Electrodes; Force control; Inductors; Ionization; Optical films; Particle measurements; Substrates; Surface discharges; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Conference Proceedings, 1997 IEEE International Symposium on

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-3752-2

Type

conf

DOI

10.1109/ISSM.1997.664635

Filename

664635