Title :
Monitoring key CMP process parameters to improve manufacturing productivity
Author :
Grayson, Thomas S.
Author_Institution :
Rockwell Semicond. Syst., Newport Beach, CA, USA
Abstract :
A discussion of three different methods of monitoring CMP process parameters are presented that can help lead to improved manufacturing productivity. The three methods include data capture of down force from load cell output, direct pressure uniformity measurements from wafer carrier surfaces and wafer shape measurements of pre-polished wafers
Keywords :
integrated circuit yield; monitoring; polishing; pressure measurement; shape measurement; Preston equation; chemical mechanical polishing; data capture; direct pressure uniformity measurements; down force; improved manufacturing productivity; load cell output; pre-polished wafers; process parameters monitoring; wafer carrier surfaces; wafer shape measurements; Assembly; Condition monitoring; Force feedback; Force measurement; Manufacturing processes; Pressure measurement; Production; Productivity; Semiconductor device manufacture; Shape measurement;
Conference_Titel :
Semiconductor Manufacturing Conference Proceedings, 1997 IEEE International Symposium on
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3752-2
DOI :
10.1109/ISSM.1997.664636
