Title :
2D Numerical Simulation of Titanium Silicide Growth
Author :
Fornara, P. ; Poncet, A.
Author_Institution :
CNET-CNS, France Telecom, Meylan, France
Abstract :
The aim of this paper is to present a physically based numerical model for TiSi2 growth. After a description of the model which has been developed, some results on kinetics will be presented for 1D simulation. Finally, 2D simulations will be analysed with more focus on local effects around spacers in LDD CMOS technology.
Keywords :
CMOS integrated circuits; integrated circuit modelling; numerical analysis; semiconductor growth; titanium compounds; 1D simulation; 2D numerical simulation; LDD CMOS technology; TiSi2; numerical model; titanium silicide growth; Atomic layer deposition; Circuit simulation; Equations; Numerical simulation; Oxidation; Predictive models; Silicides; Silicon; Space technology; Titanium;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
