• DocumentCode
    1912354
  • Title

    2D Numerical Simulation of Titanium Silicide Growth

  • Author

    Fornara, P. ; Poncet, A.

  • Author_Institution
    CNET-CNS, France Telecom, Meylan, France
  • fYear
    1993
  • fDate
    13-16 Sept. 1993
  • Firstpage
    151
  • Lastpage
    154
  • Abstract
    The aim of this paper is to present a physically based numerical model for TiSi2 growth. After a description of the model which has been developed, some results on kinetics will be presented for 1D simulation. Finally, 2D simulations will be analysed with more focus on local effects around spacers in LDD CMOS technology.
  • Keywords
    CMOS integrated circuits; integrated circuit modelling; numerical analysis; semiconductor growth; titanium compounds; 1D simulation; 2D numerical simulation; LDD CMOS technology; TiSi2; numerical model; titanium silicide growth; Atomic layer deposition; Circuit simulation; Equations; Numerical simulation; Oxidation; Predictive models; Silicides; Silicon; Space technology; Titanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
  • Conference_Location
    Grenoble
  • Print_ISBN
    2863321358
  • Type

    conf

  • Filename
    5435481
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1912354