Two-Dimensional Modelling of SILO Isolation Structures

This paper presents quantitative 2D stress dependent simulations of the Sealed Interface Local Oxidation (SILO) structure. In the SILO structure, the oxidation mask consists in a Nitridel/Oxide/Nitride II stack, in which the thin Nitride I layer is directly sealed on the silicon surface. A very thin oxide layer is considered between the silicon and the nitride-I layer in which the oxidant diffusivity is lowered according to the sealing efficiency. A correct agreement with experiments [1] is obtained for a wide range of processing conditions.