Title :
Physical Properties of Silicon CMOS Devices Operated between Liquid Helium and Room Temperature
Author :
Rais, K. ; Hafez, L.M. ; Emrani, A. ; Balestra, F. ; Ghibaudo, G. ; Haond, M.
Author_Institution :
LPCS/ENSERG, Grenoble, France
Abstract :
The main problems which arise in Si CMOS devices while operated at low temperature are investigated. More specifically, the mobility modelling, the influence of impurity freeze-out on LDD resistance, the impact ionization substrate current, the Gate Induced Drain Leakage (GIDL) phenomenon are investigated over a wide range of temperatures (42-300 K).
Keywords :
CMOS integrated circuits; elemental semiconductors; impact ionisation; semiconductor device models; silicon; LDD resistance; gate induced drain leakage; impact ionization substrate current; impurity freeze-out; liquid helium; mobility modelling; physical properties; room temperature; silicon CMOS devices; temperature 4.2 K to 300 K; Electric resistance; Helium; Impact ionization; Impurities; MOS devices; Semiconductor device modeling; Silicon; Temperature distribution; Transconductance; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
