Title :
Calculation of a bipolar transistor phase characteristics
Author :
Belyaev, I.V. ; Fursaev, M.A.
Author_Institution :
Saratov State Tech. Univ., Saratov
Abstract :
Calculation method of a bipolar transistor phase characteristics, where transistor operates at current cutoff regime with closed collector transition, is considered. Notion of transistor as an active quadripole with using piecewise quasi-linear model of this device is underlay of this method.
Keywords :
bipolar transistors; active quadripole; bipolar transistor phase; collector transition; current cutoff regime; piecewise quasi-linear model; Bipolar transistors; Design automation; Helium; Microwave FETs; Microwave oscillators; Microwave transistors;
Conference_Titel :
Actual Problems of Electron Devices Engineering, 2008. APEDE '08. International Conference on
Conference_Location :
Saratov
Print_ISBN :
978-1-4244-2121-3
Electronic_ISBN :
978-1-4244-2122-0
DOI :
10.1109/APEDE.2008.4720107