Title :
Considerations on IDDQ test on OTFT circuits
Author :
Picos, Rodrigo ; Garcia, Eugeni ; Roca, Miquel ; Isern, Eugeni ; Iñiguez, Benjamin ; Castro-Carranza, Alejandra ; Estrada, Magali ; Cerdeira, Antonio
Author_Institution :
GEE, Univ. de les Illes, Balears, Spain
Abstract :
In this paper we will analyze the feasibility of applying the well known IDDQ test technique to OTFT circuits. Specifically, we will analyze the implications of the leakage current, the Ion/Ioff ratio, and the S/N ratio on the applicability of IDDQ. It will be shown that, even if the IDDQ is applicable, some adaptation must be made, to allow detecting the possible faults over the background level. These adaptations may probably take the form of partitioning strategies, which must be adapted to the actual technology.
Keywords :
fault diagnosis; leakage currents; organic semiconductors; semiconductor device testing; thin film transistors; IDDQ test; Ion/Ioff ratio; OTFT circuit; S/N ratio; fault detection; leakage current; organic TFT; CMOS integrated circuits; Circuit faults; Integrated circuit modeling; Noise; Organic thin film transistors;
Conference_Titel :
Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference on
Conference_Location :
Playa del Carmen
Print_ISBN :
978-1-4577-1116-9
Electronic_ISBN :
978-1-4577-1115-2
DOI :
10.1109/ICCDCS.2012.6188878
