DocumentCode
1912921
Title
Considerations on IDDQ test on OTFT circuits
Author
Picos, Rodrigo ; Garcia, Eugeni ; Roca, Miquel ; Isern, Eugeni ; Iñiguez, Benjamin ; Castro-Carranza, Alejandra ; Estrada, Magali ; Cerdeira, Antonio
Author_Institution
GEE, Univ. de les Illes, Balears, Spain
fYear
2012
fDate
14-17 March 2012
Firstpage
1
Lastpage
4
Abstract
In this paper we will analyze the feasibility of applying the well known IDDQ test technique to OTFT circuits. Specifically, we will analyze the implications of the leakage current, the Ion/Ioff ratio, and the S/N ratio on the applicability of IDDQ. It will be shown that, even if the IDDQ is applicable, some adaptation must be made, to allow detecting the possible faults over the background level. These adaptations may probably take the form of partitioning strategies, which must be adapted to the actual technology.
Keywords
fault diagnosis; leakage currents; organic semiconductors; semiconductor device testing; thin film transistors; IDDQ test; Ion/Ioff ratio; OTFT circuit; S/N ratio; fault detection; leakage current; organic TFT; CMOS integrated circuits; Circuit faults; Integrated circuit modeling; Noise; Organic thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference on
Conference_Location
Playa del Carmen
Print_ISBN
978-1-4577-1116-9
Electronic_ISBN
978-1-4577-1115-2
Type
conf
DOI
10.1109/ICCDCS.2012.6188878
Filename
6188878
Link To Document