Title :
Optimisation of a self-aligned twin well without channel stop implant for improved isolation of a 0.4μm CMOS process
Author :
Decoutere, S. ; Vancuyck, G. ; Deferm, L.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
The pwell implant and anneal for a 0.4μm CMOS process have been optimized for a self-aligned twin well without channel stop implant to yield improved n+ to nwell spacing, reduce the poly field NMOS leakage and make the process less sensitive to latch-up.
Keywords :
CMOS integrated circuits; MOSFET; annealing; circuit optimisation; leakage currents; CMOS process; anneal; isolation; latch-up; optimisation; poly field NMOS leakage; pwell implant; self-aligned twin well; size 0.4 mum; Annealing; Boron; CMOS process; CMOS technology; Conductivity; Implants; MOS devices; MOSFETs; Oxidation; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
