DC and AC Performance of Si and Si/Si(1-x) Ge(x) Bipolar Transistors at Temperatures up to 300 C

Author

Pohl, M. ; Aufinger, K. ; Böck, J. ; Meister, T.F. ; Philipsborn, H. Von

Author_Institution

Siemens AG, Munich, Germany

fYear

1998

fDate

8-10 Sept. 1998

Firstpage

100

Lastpage

103

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1998. Proceeding of the 28th European

Conference_Location

Bordeaux, France

Print_ISBN

2-86332-234-6

Type

Filename

1503498

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