DocumentCode :
1913017
Title :
Strained Layer Quantum Well Lasers for Optical Communications
Author :
Lee, T.P. ; Zah, C.E. ; Bhat, R.
Author_Institution :
Bellcore, Red Bank, NJ, USA
fYear :
1993
fDate :
13-16 Sept. 1993
Firstpage :
275
Lastpage :
282
Abstract :
It has been shown that strained-layer quantum well lasers have many advantages over conventional double heterostructure lasers for optical communications. They have exhibited low threshold currents, high temperature operation, high modulation speed, high power output, narrow linewidth, and high reliability. In particular, the wide optical gain width has permitted, for the first time, the realization of a 21-wavelength distributed feedback laser array monolithically integrated with an optical power combiner and amplifiers on the same chip. In this talk, the design and the performance of these strained-layer QW lasers and DFB laser arrays are presented, and their impact on future optical communications is discussed.
Keywords :
III-V semiconductors; aluminium compounds; amplifiers; distributed feedback lasers; gallium compounds; indium compounds; integrated optics; optical communication equipment; optical modulation; quantum well lasers; semiconductor laser arrays; AlGaInAs-InP; amplifiers; distributed feedback laser array; high modulation speed; high power output; high reliability; high temperature operation; low threshold currents; monolithic integration; narrow linewidth; optical communications; optical power combiner; strained layer quantum well lasers; wide optical gain width; Distributed feedback devices; Integrated optics; Laser feedback; Optical arrays; Optical feedback; Optical fiber communication; Optical modulation; Quantum well lasers; Stimulated emission; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
Print_ISBN :
2863321358
Type :
conf
Filename :
5435505
Link To Document :
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