Low-noise OTA for neural amplifying applications

Author

Saberhosseini, S. Shirin ; Zabihian, Alireza ; Sodagar, Amir M.

Author_Institution

ECE Dept., K.N. Toosi Univ. of Technol., Tehran, Iran

fYear

2012

fDate

14-17 March 2012

Firstpage

1

Lastpage

4

Abstract

This paper presents an ultra low-power operational transconductance amplifier (OTA), which can be used in the implementation of preconditioning stage of implantable neural recording microsystems. In such applications, low-noise performance is both critical and challenging especially at very low power consumptions. By means of a new structure for OTA, a low-noise, low-power, and small-silicon-area OTA is proposed. The OTA was designed in a 0.5-μm standard 2P3M N-Well CMOS process. Simulation results for the proposed OTA show an open-loop gain of 62dB, unity-gain bandwidth of 4MHz, and 59nVrms/√Hz input-referred noise. Power dissipation of the OTA is as low as 4μW at 3-V supply voltage.

Keywords

CMOS analogue integrated circuits; biomedical electronics; low noise amplifiers; low-power electronics; neural chips; operational amplifiers; power consumption; 2P3M N-Well CMOS process; bandwidth 4 MHz; gain 62 dB; implantable neural recording microsystem; low-noise OTA; low-noise performance; neural amplifying application; power consumption; power dissipation; preconditioning stage; size 0.5 mum; small-silicon-area OTA; ultra low-power operational transconductance amplifier; unity-gain bandwidth; voltage 3 V; 1f noise; Bandwidth; Gain; Silicon; Thermal noise; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference on

Conference_Location

Playa del Carmen

Print_ISBN

978-1-4577-1116-9

Electronic_ISBN

978-1-4577-1115-2

Type

conf

DOI

10.1109/ICCDCS.2012.6188881

Filename

6188881