Title :
Development of a monolithic FET Ka-band single side band upconverter and image reject downconverter
Author :
Brady, V. ; Hsu, T.-I. ; Reeves, R. ; Vermeulen, M.
Author_Institution :
GAMMA Monolithics, Orlando, FL, USA
Abstract :
A GaAs monolithic, single-sideband (SSB), Ka-band FET upconverter is being developed for use in a miniature coherent radar transceiver module, along with a monolithic image reject downconverter. The SSB upconverter IC comprises balanced FET converters, Lange couplers, and an IF quadrature splitter. The balanced FET converters provide 7 dB of conversion loss and 28 dB of LO rejection. The SSB IC, currently in fabrication, is expected to provide 8 dB of conversion loss, 5 dBm of output power, and 28 dB of LO and 20 dB of lower sideband rejection. The image reject downconverter IC comprises a balanced pair of FET converters. Lange couplers, a Wilkinson divider, and a lumped element branchline coupler. The single FET converters produced 1 dB of conversion gain with a 5.5-dB noise figure, DSB. The image reject downconverter, currently in fabrication, is expected to provide 0 dB of conversion gain and 20 dB of image rejection with a noise figure of 9 dB, SSB.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; frequency convertors; gallium arsenide; radar equipment; transceivers; 0 to 1 dB; 5.5 dB; 7 to 28 dB; 9 dB; EHF; GaAs; IF quadrature splitter; Ka-band; LO rejection; Lange couplers; MM-wave; MMIC; SSB; SSB upconverter IC; Wilkinson divider; balanced FET converters; balanced pair of FET converters; conversion gain; conversion loss; lower sideband rejection; lumped element branchline coupler; miniature coherent radar transceiver module; monolithic image reject downconverter; noise figure; output power; semiconductors; single side band upconverter; single-sideband; Amplitude modulation; Couplers; FET integrated circuits; Fabrication; Gain; Gallium arsenide; Image converters; Noise figure; Radar imaging; Transceivers;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/GAAS.1989.69323