Magneto-conduction in strained nano-scaled pMOSFETs

Author

Gutiérrez-D, E.A. ; De los A, E. Póndigo ; Vega-G, V.H. ; Guarin, F.

Author_Institution

Dept. of Electron., INAOE, Puebla, Mexico

fYear

2012

fDate

14-17 March 2012

Firstpage

1

Lastpage

4

Abstract

We have measured gate current components from the axis perpendicular-to-the-surface. The measured channel magneto-conductance shows also a pronounced magnetic asymmetry, which suggests the channel current is flowing into different crystallographic orientations with different effective masses and hole mobilities. By monitoring the different crystallographic components of the hole flow we have enhanced the understanding of the physics for Si-oxide interface charge transfer and channel conductance in low-dimensional semiconductor devices.

Keywords

crystallography; elemental semiconductors; hole mobility; magnetoresistance; nanoelectronics; power MOSFET; silicon; Si; Si-oxide interface charge transfer; channel current; channel magneto-conductance; crystallographic component; crystallographic orientation; gate current component measurement; hole flow; hole mobility; low-dimensional semiconductor device; magnetic asymmetry; strained nano-scaled pMOSFET; Current measurement; Logic gates; Magnetic field measurement; Perpendicular magnetic anisotropy; Semiconductor device measurement; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference on

Conference_Location

Playa del Carmen

Print_ISBN

978-1-4577-1116-9

Electronic_ISBN

978-1-4577-1115-2

Type

conf

DOI

10.1109/ICCDCS.2012.6188885

Filename

6188885