DocumentCode :
1913178
Title :
Si1-x,Gex Heterojunction Bipolar Transistors: the future of silicon bipolar technology or not?
Author :
Ashbum, P. ; Shafi, Z A ; Post, I R C ; Gregory, H.J.
Author_Institution :
Dept. of Electron. & Comput. Sci., Univ. of Southampton, Southampton, UK
fYear :
1993
fDate :
13-16 Sept. 1993
Firstpage :
301
Lastpage :
308
Abstract :
This paper reviews recent progress in high-speed Si/Si1-xGex heterojunction bipolar transistors. The values of fT and ECL gate delay achieved with these devices are described and compared with results for silicon homojunction bipolar transistors. The technological problems associated with the use of Si1-xGex are discussed, and device and circuit modelling results are presented which highlight the future prospects of Si1-xGex technology.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; Si-Si1-xGex; circuit modelling; device modelling; heterojunction bipolar transistor; high speed bipolar transistor; silicon bipolar technology; Bipolar transistors; Boron; Circuits; Computer science; Delay; Heterojunction bipolar transistors; Ion implantation; Parasitic capacitance; Silicon; Tail;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
Print_ISBN :
2863321358
Type :
conf
Filename :
5435510
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1913178
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